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US 2015/0104884 A1Published application
Semiconductor memory device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorSeung Hyun LEE
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Abstract
A method for manufacturing a semiconductor memory device includes forming a magnetic tunnel junction layer on a lower electrode, forming a spacer having an annular shape on the magnetic tunnel junction layer, forming upper electrodes on both sidewall surfaces of the annular shaped spacer, removing the spacer, and etching the magnetic tunnel junction layer by using the upper electrodes as an etch mask.
Claims10
A method for manufacturing a semiconductor memory device, comprising:
- forming a magnetic tunnel junction layer on a lower electrode;
- forming a spacer having an annular shape on the magnetic tunnel junction layer;
- forming upper electrodes on both sidewall surfaces of the annular shaped spacer;
- removing the spacer;
- and
- etching the magnetic tunnel junction layer by using the upper electrodes as an etch mask.
3 more elements
Dependencies are inferred from the claim text.