Nonvolatile Semiconductor Memory Device

A non-volatile memory device, comprising:

• a substrate;
• a plurality of string stacks disposed over the substrate,
• each string stack comprising a long axis and a short axis in a plane parallel to the substrate, the long axis extending along a y-direction and the short axis extending along an x-direction,
• each string stack comprising a plurality of strings being stacked in a direction vertical to the substrate and having a first end and a second end at different locations in the y-direction,
• the plurality of string stacks comprising a first and a second set of string stacks,
• the first set of string stacks comprising at least two string stacks located at the same location in the y-direction and at different locations in the x-direction forming a repetitive pattern with a pitch A,
• the second set of string stacks being adjacent to the first set of string stacks and comprising at least two string stacks located at the same location in the y-direction and at different locations in the x-direction forming a repetitive pattern with a pitch A,
• the first set of string stacks and the second set of string stacks being at different locations in the y-direction,
• at least some of the string stacks of the first set of string stacks being offset along the x-direction from at least some of the string stacks of the second set of string stacks by a distance B, the distance B being different from a integer multiple of the pitch A.