Programming time improvement for non-volatile memory

A non-volatile storage device comprising:

• a plurality of NAND strings of non-volatile storage elements, each of the NAND strings having a channel;
• a plurality of bit lines associated with the plurality of NAND strings;
• a plurality of word lines associated with the plurality of NAND strings;
• one or more managing circuits in communication with the plurality of bit lines and the plurality of word lines, the one or more managing circuits apply a first voltage to unselected word lines during a channel pre-charge phase, the one or more managing circuits apply a second voltage that is greater than the first voltage to a selected word line during the channel pre-charge phase, the one or more managing circuits increase the first voltage on the unselected word lines to a boosting voltage, the one or more managing circuits increase the second voltage on the selected word line to a third voltage that is greater than the boosting voltage, the one or more managing circuits increase the third voltage to a program voltage on the selected word line while maintaining the boosting voltage on the unselected word lines.

A method of operating non-volatile storage comprising a plurality of NAND strings having channels, comprising:

• pre-charging the channels of the plurality of NAND strings, including applying a pre-charge voltage to a selected word line and unselected word lines associated with the plurality of NAND strings;
• applying an inhibit voltage to bit lines associated with unselected NAND strings of the plurality of NAND strings after pre-charging the channels;
• applying a program enable voltage to bit lines associated with selected NAND strings of the plurality of NAND strings after pre-charging the channels;
• increasing a voltage on the selected word line from the pre-charge voltage to a first target voltage after applying the inhibit voltage and the program enable voltage to the bit lines and while maintaining the pre-charge voltage on the unselected word lines;
• increasing the pre-charge voltage on the unselected word lines to a boosting voltage while increasing the first target voltage on the selected word line to a second target voltage during a channel boosting phase;
• and
• applying a program voltage to the selected word line after the second target voltage has been achieved on the selected word line.