Ultra thin film capacitor and manufacturing method thereof

An ultra thin film capacitor, comprising:

• a substrate;
• a dielectric unit formed of thin film dielectric layers alternately stacked with a plurality of internal electrode layers on the substrate;
• an internal electrode unit formed of a plurality of internal electrode layers alternately stacked with the thin film dielectric layers in the dielectric unit on the substrate, each internal electrode layer being formed by stacking the a first electrode layer and a second electrode layer made of material having a specific resistance lower than that of the first electrode layer;
• and
• via electrodes formed at both sides of the internal electrode unit on the substrate and each being electrically connected alternately with the stacked internal electrode layers.

A manufacturing method of an ultra thin film capacitor, comprising:

• preparing a substrate;
• forming an internal electrode laminate by alternately stacking a plurality of thin film dielectric layers and a plurality of internal electrode layers on the substrate, each internal electrode layer including first electrode layers having stacked surfaces contacting the thin film dielectric layers and a second electrode layer formed between the first electrode layers and made of material having a specific resistance lower than that of the first electrode layer;
• and
• forming via electrodes by forming via holes at both sides of the internal electrode laminate formed on the substrate and electrically and alternately connecting conductive substances filled in the via holes to the stacked internal electrode layers.

A manufacturing method of an ultra thin film capacitor, comprising:

• preparing a substrate;
• forming an internal electrode laminate by alternately stacking a plurality of internal electrode layers and a plurality of thin film dielectric layers on the substrate, each internal electrode layer being formed by stacking a first electrode layer and a second electrode layer made of material having a specific resistance lower than that of the first electrode layer;
• and
• forming via electrodes by forming via holes at both sides of the internal electrode laminate formed on the substrate and electrically and alternately connecting conductive substances filled in the via holes to the stacked internal electrode layers.