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US 2015/0102807 A1Published application
Hall effect sensor with graphene detection layer
AssigneeInfineon Technologies AG
InventorsMarkus Eckinger, Stefan Kolb, Alfons Dehe, Guenther Ruhl
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Abstract
A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.
Claims24
A structure, comprising:
- a substrate having a first side;
- a seed layer formed on said first side;
- and
- a graphene layer formed over at least a part of the seed layer;
- wherein at least a portion of the seed layer between the substrate and said graphene layer is removed to form a suspended graphene structure from said graphene layer.
2 more elements
A method for producing a hall sensor, comprising:
- providing a substrate having a first side;
- forming a seed layer on said first side;
- forming a graphene layer over at least a part of the seed layer;
- and
- removing a portion of the seed layer between the substrate and said graphene layer.
2 more elements
Dependencies are inferred from the claim text.