Semiconductor Device Including A Contact Plug With Barrier Materials
AssigneeMicron Technology, Inc.
InventorTatsuya Miyazaki
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Abstract
Disclosed herein is a semiconductor device that comprises a plug including an upper portion, a lower portion and a side surface and comprising tungsten, a barrier metal comprising tungsten nitride and covering the side surface and the lower portion of the contact plug, a conductive layer, and a barrier layer comprising titanium and intervening between the barrier metal and the first conductive layer.
Claims20
A semiconductor device comprising:
- a contact plug including an upper portion, a lower portion and a side surface interfacing the upper and lower portions with each other, the contact plug comprising tungsten;
- a barrier metal comprising tungsten nitride and covering the side surface and the lower portion of the contact plug;
- a first conductive layer;
- and
- a barrier layer comprising titanium and intervening between the barrier metal and the first conductive layer.
The semiconductor device according to claim. 2, further comprising a second conductive layer formed on the upper portion of the contact plug.
A semiconductor device comprising:
- a lower conductive layer;
- an insulating layer over the lower conductive layer, the insulating layer including a hole selectively formed therein to expose a part of the lower conductive layer;
- a contact plug formed in the hole, the contact plug comprising tungsten;
- a first barrier layer formed on the part of the lower conductive layer;
- a second barrier layer formed on the first barrier layer;
- and
- a barrier metal inserted between the second barrier layer and the contact plug.
A semiconductor device comprising:
- a lower conductive layer including a first material;
- a barrier layer including a second material and contacting to the lower conductive layer;
- a barrier metal on the barrier layer;
- a contact plug on the barrier metal;
- and
- a compound material disposed between the lower conductive layer and the barrier layer, wherein the compound material includes the first and second materials.
Dependencies are inferred from the claim text.