Mechanism for Forming Patterned Metal Pad connected to Multiple Through Silicon Vias (TSVs)

A package structure, comprising:

• a semiconductor die;
• an interposer structure connected to the semiconductor die, further comprising:
• two or more through silicon vias (TSVs);
• a patterned metal pad, wherein the two or more TSVs are physically connected to the patterned metal pad, wherein the patterned metal pad has embedded dielectric structures, wherein the embedded dielectric structures are not over the two or more TSVs, and
• a conductive structure physically connected to the two or more TSVs on an opposite end from the patterned metal pad;
• and
• a substrate connected to the interposer.

A method of forming an interposer structure, comprising:

• forming two or more through silicon vias (TSVs) in a substrate;
• forming a patterned metal pad, wherein the two or more TSVs are physically connected to the patterned metal pad, wherein the patterned metal pad has embedded dielectric structures, wherein the embedded dielectric structures are not over the two or more TSVs;
• grinding a backside of the substrate to expose the two or more TSVs;
• and
• forming a conductive structure on the backside of the structure, wherein the conductive structure is physically connected to the two or more TSVs.