Semiconductor structure including laterally disposed layers having different crystal orientations and method of fabricating the same

A semiconductor structure comprising:

• a substrate having a crystal orientation;
• an epitaxial layer grown on the substrate;
• a first crystalline semiconductor layer having a crystal orientation different from the crystal orientation of the substrate and crosslinked with the epitaxial layer at an interface between the epitaxial layer and the first crystalline semiconductor layer;
• and
• a second crystalline semiconductor layer grown on the substrate and laterally disposed of the first crystalline semiconductor layer.

A method of fabricating a semiconductor structure, the method comprising:

• providing a substrate;
• forming a crystallized amorphous layer on the substrate, the crystallized amorphous layer having a first crystal orientation;
• and
• forming a crystalline semiconductor layer on the substrate, the crystalline semiconductor layer being laterally disposed of the crystallized amorphous layer and having a second crystal orientation different from the first crystal orientation.