Magnetic random access memory with perpendicular enhancement layer

A magnetic random access memory device comprising a plurality of magnetic tunnel junction (MTJ) memory elements, each of said memory elements comprising:

• a magnetic reference layer including a first and second magnetic reference sublayers with a non-magnetic perpendicular enhancement layer interposed therebetween, said first and second magnetic reference sublayers having a first fixed magnetization direction substantially perpendicular to layer planes thereof;
• an insulating tunnel junction layer formed adjacent to said first magnetic reference sublayer opposite said non-magnetic perpendicular enhancement layer;
• a magnetic free layer formed adjacent to said insulating tunnel junction layer opposite said first magnetic reference sublayer;
• an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference sublayer opposite said non-magnetic perpendicular enhancement layer;
• a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference sublayer, said magnetic fixed layer having a second fixed magnetization direction that is substantially perpendicular to layer plane thereof and is substantially opposite to said first fixed magnetization direction;
• a non-magnetic tuning layer formed adjacent to said magnetic free layer opposite said insulating tunnel junction layer;
• and
• a magnetic compensation layer formed adjacent to said non-magnetic tuning layer opposite said magnetic free layer, said magnetic compensation layer having a third fixed magnetization direction that is substantially perpendicular to layer plane thereof and is substantially opposite to said first fixed magnetization direction.