Semiconductor device and method of manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Yu CHEN, Wan-Hua HUANG, Jing-Ying CHEN
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Abstract
A semiconductor device includes a substrate having an active region, a drain region in the active region, a source region in the active region, a gate structure, and a conductive field plate. The gate structure extends in a first direction over the active region. The gate structure is arranged between the drain region and the source region in a second direction transverse to the first direction. The conductive field plate extends in the second direction over an edge of the active region.
Claims21
A semiconductor device, comprising:
- a substrate having an active region;
- a drain region in the active region;
- a source region in the active region;
- a gate structure extending in a first direction over the active region, the gate structure arranged between the drain region and the source region in a second direction transverse to the first direction;
- and
- a conductive field plate extending in the second direction over an edge of the active region.
A semiconductor device, comprising:
- a substrate having an active region;
- at least one first source/drain region in the active region;
- at least one second source/drain region in the active region;
- at least one first well in the substrate, the at least one first well overlapping at least one edge of the active region;
- and
- a second well in the substrate, the second well overlapping the at least one first well and surrounding the at least one first source/drain region.
19-20. (canceled)
A semiconductor device, comprising:
- a substrate having an active region;
- a gate structure over the active region of the substrate, the gate structure comprising a first section and a second section, the first section and the second section dividing the active region into
- a first source/drain region between the first section and the second section, and
- a pair of second source/drain regions arranged on opposite sides of the gate structure;
- and
- a conductive field plate over the substrate, the field plate extending between the first section and the second section and overlapping an edge of the active region.
Dependencies are inferred from the claim text.