Back to results
US 2015/0102423 A1Published application
Method for finfet sram ratio tuning
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorXinyun XIE
Life of this patent
Estimating the term…
Abstract
A semiconductor device and method of forming the same include a substrate having a plurality of memory cells formed thereon. A memory cell includes pass-gate transistors, pull-up transistors, and pull-down transistors. The pass-gate transistors and a portion of the pull-down transistors have different doping concentrations.
Claims11
A method of forming a semiconductor device, the method comprising:
- providing a front-end device having a plurality of memory cells, each memory cell including at least two pull-up transistors, at least two pull-down transistors, and at least two pass-gate transistors, the pull-up transistors, the pull-down transistors, and the two pass-gate transistors each having a gate and gate sidewalls;
- performing a first lightly doped source and drain ion implantation into the at least two pull-down transistors and the at least two pass-gate transistors;
- and
- performing a second lightly doped source and drain ion implantation into a portion of the at least two pull-down transistors and the at least two pass-gate transistors.
1 more element
11-15. (canceled)
Dependencies are inferred from the claim text.