Dual-metal gate cmos devices and method for manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsHuaxiang Yin, Zuozhen Fu, Qiuxia Xu, Dapeng Chen
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Abstract
A method for manufacturing a dual metal CMOS device comprising: forming a first type metal work function modulation layer in the first gate trench and the second gate trench; forming a second type work function metal diffusion source layer in the first gate trench and the second gate trench; forming a heat isolation layer that shields the region of the first type device; and thermally annealing the regions where the first type device and the second type device are located.
Claims17
A method for manufacturing a dual metal gate CMOS device, comprising the steps of:
- a) forming a first type metal work function modulation layer in a first gate trench and a second gate trench, wherein the first gate trench is used to form a gate of a first type device, and the second gate trench is used to form a gate of a second type device;
- b) forming a second type work function metal diffusion source layer in the first gate trench and the second gate trench;
- c) forming a gap fill metal in the first gate trench and the second gate trench;
- d) forming a heat isolation layer that shields the region of the first type device;
- and
- e) thermally annealing the region in which the first type device and the second type device are located such that the metal ions in the second type work function metal diffusion source layer in the region of the second type device are diffused into the first type metal work function modulation layer, and the first type metal work function modulation layer is converted to a second type metal work function modulation layer.
A dual metal gate CMOS device, comprising:
- a substrate, and a first gate stack and a second gate stack on the substrate, wherein:
- the first gate stack sequentially comprises a gate dielectric layer, a first type metal work function modulation layer and a first gate from bottom to top;
- and
- the second gate stack sequentially comprises a gate dielectric layer, a second type metal work function modulation layer and a second gate from bottom to top, and wherein:
- a second type work function metal diffusion source layer is further formed between the first type metal work function modulation layer and the first gate, and between the second type metal work function modulation layer and the second gate.
Dependencies are inferred from the claim text.