Preventing epi damage for cap nitride strip scheme in a fin-shaped field effect transistor (finfet) device

A method for forming an oxide cap to protect a fin-shaped field effect transistor (FinFET) device, the method comprising:

• forming a set of gate structures over a finned substrate, each of the set of gate structures comprising a nitride capping layer;
• forming a set of raised source drain (RSD) structures on the finned substrate;
• forming a silicate over a subset of the RSD structures;
• oxidizing the silicate to form the oxide cap;
• and
• removing the nitride capping layer.

A fin-shaped field effect transistor (FinFET) device, formed via a process, comprising:

• forming a set of fins from a substrate to form a finned substrate;
• forming a set of gate structures over the finned substrate, each of the set of gate structures comprising a nitride capping layer;
• growing a set of epitaxial phosphorus-doped Si (SiP) regions over a subset of the set of gate structures;
• growing a silicate on the SiP regions;
• oxidizing the silicate using a plasma oxidation process to form an oxide cap;
• removing the nitride capping layer via a hot phosphorus rinse, wherein the oxide cap prevents damage to the SiP regions from the hot phosphorus rinse;
• and
• removing the oxide cap from the SiP regions.