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US 2015/0102391 A1Published application
Junction field effect transistor, and method of manufacture thereof
AssigneeAnalog Devices Technology
InventorEdward John Coyne
Life of this patent
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Abstract
A method of forming a junction field effect transistor, the transistor comprising: a back gate; a channel; a top gate; a drain and a source in current flow with the channel; wherein the method comprises selecting a first channel dimension between the top gate and the back gate such that a significant current flow path in the channel occurs in a region of relatively low electric field strength.
Claims20
A method of forming a junction field effect transistor, the transistor comprising:
- a back gate;
- a channel;
- a top gate;
- and
- a drain and a source in current flow contact with the channel,
- wherein the method comprises selecting a first channel dimension such that a significant current flow path in the channel occurs in a region of relatively low electric field strength.
3 more elements
A junction field effect transistor comprising:
- a channel;
- a gate;
- and
- a drain and a source,
- wherein the drain and source are in controllable current flow communication by way of the channel, and wherein a first channel dimension is selected such that a significant current flow path in the channel occurs in a region where electric field strength is below a threshold.
2 more elements
Dependencies are inferred from the claim text.