Hybrid silicon germanium substrate for device fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKA-HING FUNG
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Abstract
Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first buffer layer, a second buffer layer, a n-type transistor structure, and a p-type transistor structure. The first buffer layer having a first germanium concentration is formed on a substrate. The second buffer layer having a second germanium concentration is formed on the substrate, the second germanium concentration being larger than the first germanium concentration. The n-type transistor structure is formed on the first buffer layer, and the p-type transistor structure is formed on the second buffer layer.
Claims20
A semiconductor device structure, comprising:
- a first buffer layer having a first germanium concentration formed on a substrate;
- a second buffer layer having a second germanium concentration formed on the substrate, the second germanium concentration being larger than the first germanium concentration;
- a n-type transistor structure formed on the first buffer layer;
- and
- a p-type transistor structure formed on the second buffer layer.
A method of fabricating a semiconductor device structure, comprising:
- forming a first buffer layer having a first germanium concentration on a substrate;
- forming a second buffer layer having a second germanium concentration on the substrate, the second germanium concentration being larger than the first germanium concentration;
- forming a n-type transistor structure on the first buffer layer;
- and
- forming a p-type transistor structure on the second buffer layer.
Dependencies are inferred from the claim text.