Silicon carbide power device equipped with termination structure

A silicon carbide power device equipped with termination structure, comprising:

• a silicon carbide substrate including a drift layer which includes a first conductivity and an active zone and a termination zone surrounding the active zone;
• a power element structure located in the active zone;
• and
• a termination structure which is located in the termination zone and includes a second conductivity different from the first conductivity, and includes at least one first doped ring abutting and surrounding the power element structure, least one second doped ring surrounding the first doped ring and at least one ancillary ring which overlaps the first doped ring;
• wherein the first doped ring has a first doping concentration smaller than that of the second doped ring and a first doping depth greater than that of the second doped ring, and wherein the ancillary ring has a third doping depth smaller than the first doping depth and a third doping concentration greater than the first doping concentration.