Semiconductor devices in sic using vias through n-type substrate for backside contact to p-type layer

A semiconductor device comprising:

• an N-type Silicon Carbide substrate;
• an epitaxial structure on a first side of the N-type Silicon Carbide substrate, the epitaxial structure comprising a P-type Silicon Carbide layer adjacent to the N-type Silicon Carbide substrate;
• one or more openings through the N-type Silicon Carbide substrate that extend from a second side of the N-type Silicon Carbide substrate to the P-type Silicon Carbide layer in the epitaxial structure, the second side of the N-type Silicon Carbide substrate being opposite the first side of the N-type Silicon Carbide substrate, and the one or more openings expose greater than or equal to about 40% of the P-type Silicon Carbide layer;
• a first contact on the epitaxial structure opposite the N-type Silicon Carbide substrate;
• and
• a second contact on the second side of the N-type Silicon Carbide substrate and within the one or more openings through the N-type Silicon Carbide substrate such that the second contact is in physical and electrical contact with the P-type Silicon Carbide layer;
• wherein, in a forward conduction state of the semiconductor device, current flows between the first contact and the second contact through the epitaxial structure.