Thin film transistor and manufacturing method thereof, and display device
AssigneeBoe Technology Group Co., Ltd.
InventorsXiangyong Kong, Jun Cheng, Dongfang Wang, Guangcai Yuan
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Abstract
Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.
Claims21
A thin film transistor, comprising a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode connecting to the active layer by the ohmic contact layer,
- wherein the ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.
A manufacturing method of a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode,
- wherein the method comprises:
- forming the ohmic contact layer by an injection process.
(canceled)
Dependencies are inferred from the claim text.