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US 2015/0092507 A1Published application
Memory having a voltage switch circuit with one bias voltage changed in each state of conditioning
AssigneeeMemory Technology Inc.
InventorChen-Hao Po
Life of this patent
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Abstract
A voltage switch circuit includes four transistors. The four transistors may be transistors used to build logic gates. The operation of the voltage switch circuit may include precharging the output terminal of the voltage switch circuit, conditioning of the voltage switch circuit and boosting the voltage of the output terminal.
Claims20
A memory comprising:
- a plurality of write units;
- a plurality of voltage switch circuits each coupled to a corresponding write unit and configured to control the write unit;
- and
- a memory address decoder coupled to the voltage switch circuits and configured to output an address to select a voltage switch circuit accordingly;
- wherein in each state of conditioning the selected voltage switch circuit, only one bias voltage is changed.
2 more elements
A method of operation of a voltage switch circuit, comprising:
- precharging an output terminal of the voltage switch circuit to a third voltage magnitude;
- conditioning the voltage switch circuit;
- and
- boosting the output terminal to a write voltage;
- wherein in each state of conditioning the voltage switch circuit, only one bias voltage is changed.
2 more elements
Dependencies are inferred from the claim text.