Semiconductor unit and test method

A semiconductor unit comprising:

• a substrate made of a semiconductor;
• a plurality of first capacitors formed on the substrate and each including first and second conductive layers with an insulating film in between;
• and
• a detection circuit configured to detect a misalignment amount between the first and second conductive layers, based on capacitances of the plurality of first capacitors,
• wherein a plurality of the first conductive layers are provided,
• the second conductive layer is provided to be superimposed on each of the first conductive layers in part or as a whole, and
• the detection circuit is configured to detect the misalignment amount by arithmetic processing using a difference between capacitances of capacitors selected from the plurality of first capacitors and a sum of the capacitances of the selected capacitors.

A test method comprising:

• detecting a relative misalignment amount between layers on a substrate made of a semiconductor, based on electrical measurement by a device group configured of a plurality of first capacitors;
• and
• performing defect judgment on each of regions on the substrate, based on the detected misalignment amount,
• wherein the device group includes first and second conductive layers provided to be superimposed on each other in part or as a whole with an insulating film in between,
• the first conductive layer includes an edge extending along one direction,
• the second conductive layer includes a plurality of sub-conductive layers having substantially same shapes as one another, and
• the plurality of sub-conductive layers are arranged in relatively different positions with respect to the edge of the first conductive layer.

A test method comprising:

• detecting a relative misalignment amount between layers on a substrate made of a semiconductor by electrical measurement using a plurality of first capacitors;
• and
• performing defect judgment on each of regions on the substrate, based on the detected misalignment amount,
• wherein in the detecting of the misalignment amount, the misalignment amount is detected by arithmetic processing using a difference between capacitances of capacitors selected from the plurality of first capacitors and a sum of the capacitances of the selected capacitors, and
• the first capacitor includes a plurality of first conductive layers and a second conductive layer with an insulating film in between, the second conductive layer superimposed on a part or a whole of each of the first conductive layers.