Super-Self-Aligned Contacts and Method for Making the Same

A semiconductor device, comprising:

• a first linear gate structure having side surfaces oriented in a first direction and a top surface, wherein a width of the first linear gate structure is defined by a distance extending in a second direction perpendicular to the first direction between the side surfaces of the first linear gate structure, the first linear gate structure forming a gate electrode of at least one transistor;
• a second linear gate structure having side surfaces oriented in the first direction and a top surface, wherein a width of the second linear gate structure is defined by a distance extending in the second direction between the side surfaces of the second linear gate structure, the second linear gate structure forming a gate electrode of at least one transistor;
• a first gate contact in physical contact with the top surface of the first linear gate structure, the first gate contact formed to cover the width of the first linear gate structure without extending in the second direction substantially beyond either of the side surfaces of the first linear gate structure;
• and
• a second gate contact in physical contact with the top surface of the second linear gate structure, the second gate contact formed to cover the width of the second linear gate structure without extending in the second direction substantially beyond either of the side surfaces of the second linear gate structure,
• wherein the first and second linear gate structures are positioned in a side-by-side configuration, such that no other linear gate structure is positioned between the first and second linear gate structures,
• wherein the first and second gate contacts are positioned in an offset configuration, such that no virtual line oriented in the second direction extends through both the first and second gate contacts.