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US 2015/0091186 A1Published application
Interconnection structure, semiconductor device, and method of manufacturing the same
AssigneeSK hynix Inc.
InventorKi Hong YANG
Life of this patent
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Abstract
A semiconductor device includes a first insulating layer, a second insulating layer formed on the first insulating layer, a plurality of interconnection lines formed in the second insulating layer, and a first air gap disposed between the first insulating layer and the second insulating layer to surround a lower part of the interconnection lines.
Claims20
A semiconductor device comprising:
- a first insulating layer;
- a second insulating layer formed on the first insulating layer;
- a plurality of interconnection lines formed in the second insulating layer;
- and
- a first air gap disposed between the first insulating layer and the second insulating layer to surround a lower part of the interconnection lines.
2 more elements
The semiconductor device of claim wherein the interconnection lines are bit lines.
An interconnection structure comprising:
- an insulating layer including a plurality of interconnection lines therein;
- a first air gap defined in the insulating layer and positioned under the interconnection lines;
- and
- a plurality of second air gaps defined in the insulating layer and positioned between the interconnection lines.
1 more element
A method of manufacturing a semiconductor device the method comprising:
- forming an etch stop layer on a first insulating layer;
- forming a second insulating layer on the etch stop layer, wherein the second insulating layer includes a plurality of interconnection lines;
- forming a hole passing through the second insulating layer to expose the etch stop layer;
- and
- removing the etch stop layer through the hole to form a first air gap.
2 more elements
Dependencies are inferred from the claim text.