Semiconductor device

Abstract

A semiconductor device provided with a wiring substrate including a connection pad, a joining member joined with the connection pad, and a semiconductor chip including a connection terminal electrically connected to the connection pad via the joining member. The joining member includes a first intermetallic compound layer composed of an intermetallic compound of Cu3Sn or Ni3Sn4 and formed at a boundary between the connection pad and the joining member, a second intermetallic compound layer composed of an intermetallic compound of Cu3Sn or Ni3Sn4 and formed at a boundary between the connection terminal and the joining member, a third intermetallic compound layer composed of an intermetallic compound of Cu6Sn5 or (Cu,Ni)6Sn5 and formed between the first intermetallic compound layer and the second intermetallic compound layer, and a simple substance of Bi separated and dispersed in the third intermetallic compound layer.

Dependencies are inferred from the claim text.