Forming three dimensional isolation structures
AssigneeMicron Technology, Inc.
InventorsEnzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
Life of this patent
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Abstract
A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
Claims20
An apparatus comprising:
- a semiconductor substrate;
- a dielectric over the substrate;
- a plurality of parallel first direction trenches in the substrate and the dielectric;
- a plurality of parallel second direction trenches perpendicular to the first direction trenches, the second direction trenches in the substrate and the dielectric;
- the first direction trenches being filled with a filler material;
- and
- the second direction trenches including a coating configured to encourage selective deposition in the second direction trenches.
An apparatus comprising:
- a substrate;
- a pad over the substrate;
- a dielectric over the pad;
- a first trench extending in a first direction through the dielectric, the pad, and at least partially through the substrate;
- a second trench extending in a second direction through the dielectric, the pad, and at least partially through the substrate, wherein the second direction is perpendicular to the first direction;
- and
- a first filler material in the first trench and the second trench.
An apparatus comprising:
- a substrate;
- a pad over the substrate;
- a dielectric over the pad;
- a first plurality of trenches extending in a first direction through the dielectric, the pad, and at least partially through the substrate;
- a second plurality of trenches extending in a second direction through the dielectric, the pad, and at least partially through the substrate, wherein the second direction is perpendicular to the first direction;
- a filler material in the first and second plurality of trenches;
- and
- a plurality of active area pillars between the first and second plurality of trenches.
Dependencies are inferred from the claim text.