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US 2015/0091109 A1Published application
Magnetic shielding of perpendicular stt-mram
AssigneeInfineon Technologies AG
InventorsRobert Allinger, Karl Hofmann, Klaus Knobloch, Robert Strenz
Life of this patent
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Abstract
A memory having an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack. A magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks.
Claims20
A memory comprising:
- an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack;
- and
- a magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks to thereby shield the cells from memory-external magnetic fields.
A method of producing a memory comprising:
- providing a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cell stack;
- etching the cell stack to form an array of cells, wherein each cell has a magnetic layer stack;
- and
- depositing a magnetic shield between the cells,
- wherein the magnetic shield has a minimum height of at least the height of the magnetic layer stack.
2 more elements
A memory comprising:
- an array of spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack;
- and
- a magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks to thereby shield the cells from memory-external magnetic fields.
Dependencies are inferred from the claim text.