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US 2015/0091049 A1Published application
Triode
AssigneeFitipower Integrated Technology, Inc.
InventorCHIH-NAN CHENG
Life of this patent
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Abstract
A triode includes a semiconductor, a deep n-well, a p-well, an n+ doping region, and a p+ doping region. The deep n-well is disposed adjacent to the semiconductor substrate. The p-well is included in the deep n-well and serves as a collector region of the triode. The n+ doping region serves as a base region of the triode. The p+ doping region serves as an emitter region of the triode. The deep n-well is coupled to the n+ doping region.
Claims20
A triode, comprising:
- a semiconductor substrate;
- a deep n-well adjacent to the semiconductor substrate;
- a p-well serving as a collector region of the triode;
- an n+ doping region serving as a base region of the triode;
- and
- a p+ doping region serving as an emitter region of the triode;
- wherein the deep n-well is coupled to the n+ doping region.
4 more elements
A triode, comprising:
- a semiconductor substrate with a first conductivity;
- a deep well with a second conductivity included in the semiconductor substrate;
- a lightly doping region with the first conductivity serving as a collector region of the triode and included in the deep n-well;
- a first highly doping region with the second conductivity serving as a base region of the triode and included in the p-well;
- and
- a second highly doping region with the first conductivity serving as an emitter region of the triode;
- wherein the deep well is coupled to the first highly doping region.
4 more elements
Dependencies are inferred from the claim text.