Method of performing optical proximity correction for preparing mask projected onto wafer by photolithography

A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography, comprising:

• obtaining an integrated circuit layout design comprising a first feature and a second feature, wherein the first feature overlaps a first boundary of two structures in the wafer;
• recognizing an edge of the first feature close to the second feature by the distance between the first boundary and the edge;
• evaluating an optical proximity correction value for the edge through a computer system according to a rule;
• and
• compensating the layout design with the optical proximity correction value.

A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography, comprising:

• obtaining an integrated circuit layout design comprising a first feature and a second feature, wherein the first feature overlaps a first boundary of two structures in the wafer and the two structures comprise a shallow trench isolation structure and a substrate;
• recognizing an edge of the first feature close to the second feature;
• evaluating an optical proximity correction value for the edge through a computer system according to a rule;
• and
• compensating the layout design with the optical proximity correction value.