Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsKazuyuki TOYODA, Tetsuaki INADA
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi Kokusai Electric Inc.
InventorsKazuyuki TOYODA, Tetsuaki INADA
Estimating the term…
A substrate processing apparatus includes: a processing gas supply pipe configured to supply a processing gas into a processing chamber; a substrate mounting table that is installed in the processing chamber and on which a substrate to be processed is mounted; a driving unit configured to drive the substrate mounting table to move the substrate mounted on the substrate mounting table; a first plasma generating unit configured to generate plasma of the processing gas supplied into the processing chamber with a first density; and a second plasma generating unit that is installed adjacent to the first plasma generating unit in a traveling direction of the substrate and configured to generate plasma of the processing gas supplied into the processing chamber with a second density lower than the first density.
A substrate processing apparatus, comprising:
A method of manufacturing a semiconductor device, comprising:
A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process comprising:
Dependencies are inferred from the claim text.