Electromagnetic dipole for plasma density tuning in a substrate processing chamber

A method of processing a substrate in a process chamber having an electromagnetic dipole disposed between two concentric inductive coils proximate a top surface of a dielectric lid of the process chamber, the method comprising:

• providing a first current having a first magnitude to a first electromagnetic coil of the electromagnetic dipole;
• providing a second current having a second magnitude to a second electromagnetic coil of the electromagnetic dipole, wherein the second electromagnetic coil is disposed radially outward of the first electromagnetic coil at a first distance, wherein the second current is provided in an opposite direction of the first current;
• and
• processing a substrate in the process chamber using a plasma.

An process chamber for processing a substrate, comprising:

• a dielectric lid;
• an internal processing volume disposed beneath the dielectric lid;
• a substrate support disposed in the process chamber;
• an RF power supply;
• an RF feed structure coupled to the RF power supply;
• two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy from the RF power supply provided via the RF feed structure into the processing volume above the substrate support;
• an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils;
• and
• an actuator configured to move the electromagnetic dipole from a first position above the dielectric lid to a second position above the dielectric lid.