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US 2015/0087132 A1Published application
Wafer processing
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorGuowei ZHANG
Life of this patent
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Abstract
Semiconductor device and method for forming a semiconductor device are presented. A substrate having top and bottom pad stacks is provided. Each pad stack includes at least first and second pad layers. The second pad layer of the bottom pad stack is removed by a batch process. Trench isolation regions are formed in the substrate.
Claims21
A method of forming a device comprising:
- providing a substrate having top and bottom sides;
- providing a top pad stack on the top side of the substrate and a bottom pad stack on the bottom side of the substrate, wherein each pad stack comprises at least first and second pad layers;
- forming a protective layer only over a top surface of the top pad stack;
- removing the second pad layer of the bottom pad stack by a batch process, wherein the entire protective layer remains over the top pad stack and protects the top pad stack during removing of the second pad layer of the bottom pad stack;
- forming trenches in the substrate;
- and
- forming isolation regions in the trenches.
4 more elements
(canceled)
A method of forming a device comprising:
- providing a wafer substrate having top and bottom pad stacks on top and bottom surfaces of the wafer substrate respectively, wherein each pad stack comprises at least first and second pad layers, and the second pad layer is provided over the first pad layer;
- forming a protective layer only over a top surface of the top pad stack;
- removing the second pad layer of the bottom pad stack by a batch process after forming the protective layer, wherein the entire protective layer remains and protects the top pad stack during removing of the second pad layer of the bottom pad stack;
- forming trenches in the substrate;
- and
- forming isolation regions in the trenches.
3 more elements
Dependencies are inferred from the claim text.