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US 2015/0087119 A1Published application
Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier
AssigneeFujitsu Limited
InventorYuichi MINOURA
Life of this patent
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Abstract
A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end of the substrate opening; and a rear electrode made of a conductive material, disposed in the substrate opening so as to be connected to the local p-type region.
Claims11
1-8. (canceled)
A method of manufacturing a compound semiconductor device, the method comprising:
- forming a compound semiconductor layer over the surface of a substrate;
- forming an opening from the rear side of the substrate to expose a portion of the compound semiconductor layer;
- forming a local p-type region partially exposed at the end of the substrate opening by introducing a p-type dopant to the portion of the compound semiconductor layer;
- and forming a rear electrode of a conductive material so as to be disposed in the substrate opening and connected to the p-type region.
1 more element
18-19. (canceled)
Dependencies are inferred from the claim text.