Low-Temperature Fabrication of Spray-Coated Metal Oxide Thin Film Transistors
OwnerAntonio Facchetti, Tobin J. Marks +3inventors
InventorsAntonio Facchetti, Tobin J. Marks, Xinge Yu, Yu Xia, William Christopher Sheets
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Abstract
The present teachings relate to a method of enabling metal oxide film growth via solution processes at low temperatures (≦350° C.) and in a time-efficient manner. The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.
Claims20
A method of fabricating a metal oxide thin film transistor comprising a thin film metal oxide semiconductor, the method comprising forming the thin film metal oxide semiconductor by contacting a substrate with an aerosol of a semiconductor precursor composition while maintaining the substrate at a temperature ranging between about 100° C. and about 350° C., wherein the semiconductor precursor composition comprises a fuel and one or more oxidizing agents in a solvent or solvent mixture, and wherein the fuel and/or at least one of the oxidizing agent(s) comprises a metal salt comprising indium and the fuel and the one or more oxidizing agents are present in amounts to allow metal oxide formation and complete combustion of the fuel, thereby converting the fuel into CO2, H2O and optionally N2.
Dependencies are inferred from the claim text.