Methods of forming thin-film photovoltaic devices with discontinuous passivation layers

A method for forming a photovoltaic device, the method comprising:

• forming a thin-film absorber layer over and in electrical contact with a back contact layer, the back contact layer comprising a conductive material and the thin-film absorber layer having a doping polarity;
• forming a partner layer over and in electrical contact with the thin-film absorber layer, the partner layer having a doping polarity opposite that of the thin-film absorber layer, the partner layer and thin-film absorber layer thereby forming a p-n junction;
• forming a front contact layer disposed over and in electrical contact with the partner layer;
• and
• forming at least one of:
• a first discontinuous passivation layer disposed between the thin-film absorber layer and the partner layer, the partner layer making electrical contact with the thin-film absorber layer only through discontinuities in the first discontinuous passivation layer;
• a second discontinuous passivation layer disposed between the partner layer and the front contact layer, the front contact layer making electrical contact with the partner layer only through discontinuities in the second discontinuous passivation layer;
• or
• a third discontinuous passivation layer disposed between the back contact layer and the thin-film absorber layer, the thin-film absorber layer making electrical contact with the back contact layer only through discontinuities in the third discontinuous passivation layer.