Method for making a lithography mask

A method of making a mask, the method comprising:

• receiving an integrated circuit (IC) design layout that has a first pattern layer including a first feature and has a second pattern layer including a second feature, wherein when the first and second features are positioned such that, when formed in a substrate, the first and second features are spaced a first distance between each other;
• modifying the IC design layout by adjusting a dimension of the first feature based on the first distance, wherein the dimension of the first feature is adjusted by adding a value when the first distance is larger than a first predetermined value;
• and
• generating a mask for the first pattern layer, including the modified first feature.

A method of making a mask, the method comprising:

• receiving an integrated circuit (IC) design layout that has a first pattern layer including a first feature and has a second pattern layer including a second feature, wherein when the first and second features are positioned such that, when formed in a substrate, the first and second features are spaced a first distance between each other;
• performing a logic operation (LOP) to the IC design layout, such that the LOP biases the first feature based on the first distance;
• and
• generating a tape-out data from the modified IC design layout for mask making.