Method for cleaning titanium alloy deposition

Abstract

Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support.

Dependencies are inferred from the claim text.