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US 2015/0084179 A1Published application
Semiconductor module
AssigneeMitsubishi Electric Corporation
InventorKenji Hatori
Life of this patent
Estimating the term…
Abstract
A power semiconductor chip and a low-power portion that has power consumption lower than that of the power semiconductor chip are located on a predetermined surface side of a heat sink having conductivity. A first plate-shaped insulating member extends between the power semiconductor chip and the heat sink. A second plate-shaped insulating member extends between the low-power portion and the heat sink. A portion, which faces the low-power portion, of the second plate-shaped insulating member is thicker than a portion, which faces the power semiconductor chip, of the first plate-shaped insulating member.
Claims7
1-8. (canceled)
A semiconductor module, comprising:
- a heat sink having conductivity;
- a power semiconductor chip located on a predetermined surface side of said heat sink;
- a low-power portion that is located on said predetermined surface side of said heat sink and has power consumption lower than that of said power semiconductor chip;
- a first plate-shaped insulating member extending between said power semiconductor chip and said heat sink;
- and
- a second plate-shaped insulating member extending between said low-power portion and said heat sink,
- wherein a portion, which faces said low-power portion, of said second plate-shaped insulating member is thicker than a portion, which faces said power semiconductor chip, of said first plate-shaped insulating member,
- said semiconductor module further comprising:
- a high-heat-resistant chip that is located on said predetermined surface side of said heat sink and has heat resistance higher than that of said power semiconductor chip;
- and
- a third plate-shaped insulating member extending between said high-heat-resistant chip and said heat sink,
- wherein a portion, which faces said high-heat-resistant chip, of said third plate-shaped insulating member is thicker than said portion, which faces said power semiconductor chip, of said first plate-shaped insulating member.
9 more elements
A semiconductor module, comprising:
- a heat sink having conductivity;
- a power semiconductor chip located on a predetermined surface side of said heat sink;
- a low-power portion that is located on said predetermined surface side of said heat sink and has power consumption lower than that of said power semiconductor chip;
- a first plate-shaped insulating member extending between said power semiconductor chip and said heat sink;
- and
- a second plate-shaped insulating member extending between said low-power portion and said heat sink,
- wherein a portion, which faces said low-power portion, of said second plate-shaped insulating member is thicker than a portion, which faces said power semiconductor chip, of said first plate-shaped insulating member,
- said semiconductor module further comprising a high-heat-resistant chip that is located on said predetermined surface side of said heat sink and has heat resistance higher than that of said power semiconductor chip, wherein
- said first plate-shaped insulating member also extends between said high-heat-resistant chip and said heat sink, and
- a portion, which faces said high-heat-resistant chip, of said first plate-shaped insulating member is thicker than said portion, which faces said power semiconductor chip, of said first plate-shaped insulating member.
7 more elements
A semiconductor module, comprising:
- a heat sink having conductivity;
- a power semiconductor chip located on a predetermined surface side of said heat sink;
- a low-power portion that is located on said predetermined surface side of said heat sink and has power consumption lower than that of said power semiconductor chip;
- and
- a common plate-shaped insulating member extending between said power semiconductor chip and said heat sink and also extends between said low-power portion and said heat sink,
- wherein a portion, which faces said low-power portion, of said common plate-shaped insulating member is thicker than a portion, which faces said power semiconductor chip, of said common plate-shaped insulating member,
- said semiconductor module further comprising a high-heat-resistant chip that is located on said predetermined surface side of said heat sink and has heat resistance higher than that of said power semiconductor chip, wherein
- said common plate-shaped insulating member also extends between said high-heat-resistant chip and said heat sink, and
- a portion, which faces said high-heat-resistant chip, of said common plate-shaped insulating member is thicker than said portion, which faces said power semiconductor chip, of said common plate-shaped insulating member.
6 more elements
A semiconductor module, comprising:
- a heat sink having conductivity;
- a power semiconductor chip located on a predetermined surface side of said heat sink;
- a low-power portion that is located on said predetermined surface side of said heat sink and has power consumption lower than that of said power semiconductor chip;
- and
- a common plate-shaped insulating member extending between said power semiconductor chip and said heat sink and also extends between said low-power portion and said heat sink,
- wherein a portion, which faces said low-power portion, of said common plate-shaped insulating member is thicker than a portion, which faces said power semiconductor chip, of said common plate-shaped insulating member,
- said semiconductor module further comprising:
- a high-heat-resistant chip that is located on said predetermined surface side of said heat sink and has heat resistance higher than that of said power semiconductor chip;
- and
- another plate-shaped insulating member extending between said high-heat-resistant chip and said heat sink,
- wherein a portion, which faces said high-heat-resistant chip, of said another plate-shaped insulating member is thicker than said portion, which faces said power semiconductor chip, of said common plate-shaped insulating member.
8 more elements
A semiconductor module, comprising:
- a heat sink having conductivity;
- a power semiconductor chip located on a predetermined surface side of said heat sink;
- a high-heat-resistant chip that is located on said predetermined surface side of said heat sink and has heat resistance higher than that of said power semiconductor chip;
- a plate-shaped insulating member extending between said power semiconductor chip and said heat sink;
- and
- another plate-shaped insulating member extending between said high-heat-resistant chip and said heat sink,
- wherein a portion, which faces said high-heat-resistant chip, of said another plate-shaped insulating member is thicker than a portion, which faces said power semiconductor chip, of said plate-shaped insulating member.
4 more elements
A semiconductor module, comprising:
- a heat sink having conductivity;
- a power semiconductor chip located on a predetermined surface side of said heat sink;
- a high-heat-resistant chip that is located on said predetermined surface side of said heat sink and has heat resistance higher than that of said power semiconductor chip;
- and
- a common plate-shaped insulating member extending between said power semiconductor chip and said heat sink and also extends between said high-heat-resistant chip and said heat sink,
- wherein a portion, which faces said high-heat-resistant chip, of said common plate-shaped insulating member is thicker than a portion, which faces said power semiconductor chip, of said common plate-shaped insulating member.
3 more elements
Dependencies are inferred from the claim text.