Device, system and method for providing mems structures of a semiconductor package

A semiconductor package comprising:

• a die;
• a build-up carrier coupled to the die, the build-up carrier comprising a plurality of build-up layers including a first layer of porous dielectric material;
• and
• a MEMS device having a suspended copper portion anchored by the plurality of build-up layers, wherein a gap separates the suspended copper portion from an exposed surface of the first layer of porous dielectric material.

A method comprising:

• forming a first portion of a build-up carrier for a die, including forming a layer of porous dielectric material;
• disposing a seed layer on the layer of porous dielectric material;
• plating copper on the seed layer;
• and
• after plating the copper, etching copper adjacent to the layer of porous dielectric material to form a suspended portion of a MEMS device, including etching copper to form a gap between the layer of porous dielectric material and the suspended portion of a MEMS device.

A semiconductor package comprising:

• a die;
• a build-up carrier coupled to the die, the build-up carrier comprising a plurality of build-up layers including:
• a first insulating layer and a second insulating layer each including a respective organic dielectric material;
• and
• a layer of silicon nitride material disposed between and adjacent to the first insulating layer and the second insulating layer;
• and
• a copper structure disposed between portions of the second insulating layer or portions of the layer of silicon nitride material, the copper structure coupled via the plurality of build-up layers to a contact point of the die.

A method comprising:

• forming a first portion of a build-up carrier for a die, including laminating a first film comprising:
• a first insulating layer including an organic dielectric material;
• and
• a first release layer;
• after laminating the first film, desmearing a surface of the first portion;
• after desmearing the surface of the first portion, separating the first release layer to expose a portion of the first insulating layer;
• disposing a first layer of titanium on the exposed portion of the first insulating layer;
• and
• forming a first copper structure on the first layer of titanium.