Charge-Compensation Semiconductor Device

A semiconductor device, comprising a semiconductor body comprised of a semiconductor material having a breakdown charge per area, and comprising:

• a drain region of a first conductivity type;
• a plurality of spaced apart body regions of a second conductivity type;
• a first charge-compensation structure arranged between the body regions and the drain region, and comprising, in a first cross-section, a plurality of spaced apart first pillar regions of the first conductivity type;
• a second charge-compensation structure integrated in the semiconductor body, and comprising a plurality of spaced apart second pillar regions of the first conductivity type in Ohmic contact with the drain region;
• a first field-stop region of the first conductivity type arranged between the first charge-compensation structure and the second charge-compensation structure, having a doping concentration per area higher than the breakdown charge per area of the semiconductor material divided by the elementary charge, and in Ohmic contact with the first pillar regions of the first conductivity type and the second pillar regions of the first conductivity type;
• and
• a second field-stop region of the first conductivity type having a doping concentration per area lower than the breakdown charge per area of the semiconductor material divided by the elementary charge, and in Ohmic contact with the first pillar regions via the first field-stop region.

A semiconductor device, comprising a semiconductor body comprised of a semiconductor material having a breakdown charge per area and comprising a main horizontal surface, an active area, a punch through area, a source metallization arranged on the main horizontal surface and a drain metallization, in the active area the semiconductor body further comprising in a vertical cross-section substantially orthogonal to the main horizontal surface:

• a first charge-compensation structure comprising a plurality of spaced apart first p-type pillar regions in Ohmic contact with the source metallization;
• a second charge-compensation structure comprising a plurality of spaced apart second p-type pillar regions;
• and
• an n-type first embedded field-stop region in Ohmic contact with the drain metallization arranged between the first p-type pillar regions and the second p-type pillar regions, and having a doping concentration per area higher than the breakdown charge per area of the semiconductor material divided by the elementary charge,
• in the punch-through area the semiconductor body further comprising:
• a first semiconductor region in Ohmic contact with the drain metallization;
• a p-type semiconductor region in Ohmic contact with the source metallization and forming a pn-junction with the first semiconductor region;
• a floating p-type body region extending from the punch-through area into the active area, having a higher maximum doping concentration than the second p-type pillar regions and adjoining each of the second p-type pillar regions;
• and
• an n-type second embedded field-stop region in Ohmic contact with the first embedded field-stop region, forming a pn-junction with the floating p-type body region, arranged between the first semiconductor region and the floating p-type body region, and having a doping concentration per area lower than the breakdown charge per area of the semiconductor material divided by the elementary charge.

A vertical semiconductor device, comprising a semiconductor body comprising a main horizontal surface and an edge delimiting the semiconductor body in a direction substantially parallel to the main horizontal surface, a first metallization arranged on the main horizontal surface, and a second metallization arranged opposite to the first metallization, the semiconductor body further comprising:

• a first semiconductor region having a first maximum doping concentration in Ohmic contact with the second metallization, and substantially extending to at least one of the main horizontal surface and the edge;
• an embedded field-stop zone of a first conductivity type in Ohmic contact with the first semiconductor region and the second metallization, having a maximum doping concentration higher than the first maximum doping concentration, and adjoining the first semiconductor region;
• a second semiconductor region of a second conductivity type in Ohmic contact with the first metallization, arranged at least close to the main horizontal surface, forming a rectifying junction with the first semiconductor region, and overlapping with the embedded field-stop zone when viewed from above;
• a floating body region of the second conductivity type arranged between the embedded field-stop zone and the second metallization, and forming a pn-junction with the embedded field-stop zone;
• a first equipotential semiconductor region of the first conductivity type embedded in the first semiconductor region, extending from the embedded field-stop region substantially to the main horizontal surface, and arranged between the second semiconductor region and the edge;
• and
• a second equipotential semiconductor region of the second conductivity type embedded in the first semiconductor region, extending from the floating body region substantially to the main horizontal surface, and arranged between the first equipotential semiconductor region and the edge.