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US 2015/0084116 A1Published application
Devices including ultra-short gates and methods of forming same
AssigneeCree, Inc.
InventorsZoltan Ring, Dan Namishia
Life of this patent
Estimating the term…
Abstract
Provided are devices including ultra-short gates and methods of forming same. Methods include forming a first gate pattern on a semiconductor that includes a first recess having a first width, A dielectric spacer is formed on a sidewall of the first recess to define a second recess in the first recess that has a second width that is smaller than the first width. A gate having the second width is formed in the second recess.
Claims30
A method of forming a semiconductor device, comprising:
- forming a first gate pattern on a semiconductor that includes a first recess having a first width;
- forming a dielectric spacer on a sidewall of the first recess to define a second recess in the first recess that has a second width that is smaller than the first width;
- and
- forming a gate having the second width in the second recess.
1 more element
A device comprising:
- a semiconductor including a gate recess that includes a bottom surface of a preliminary gate recess and a sidewall including a dielectric spacer that is formed on a sidewall of the preliminary recess, the gate recess including a recess width that is less than about 0.25 μm.
Dependencies are inferred from the claim text.