Solid-state imaging device and method of manufacturing the device

A solid-state imaging device comprising:

• unit pixels formed on a semiconductor substrate, wherein
• each of the unit pixels includes
• a photoelectric converter configured to photoelectrically convert incident light to generate signal charge,
• a floating diffusion being a diffusion layer formed in the semiconductor substrate and configured to store the signal charge,
• a pinning layer being a diffusion layer formed in the semiconductor substrate in a position shallower than the floating diffusion, and
• a pixel transistor including a gate electrode formed on the semiconductor substrate, and a source diffusion layer and a drain diffusion layer formed in the semiconductor substrate at sides of the gate electrode,
• one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion,
• the pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor, and
• a conductivity type of the floating diffusion is opposite to that of the pinning layer.