Light emitting device grown on a silicon substrate
AssigneeKoninklijke Philips N.V.
InventorsRajwinder Singh, John Epler, SR.
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Abstract
A method according embodiments of the invention includes growing a semiconductor structure on a substrate including silicon. The semiconductor substrate includes an aluminum-containing layer in direct contact with the substrate, and a III-nitride light emitting layer disposed between an n-type region and a p-type region. The method further includes removing the substrate. After removing the substrate, a transparent material is formed in direct contact with the aluminum-containing layer. The transparent material is textured.
Claims26
A device comprising:
- a semiconductor structure comprising:
- a III-nitride light emitting layer disposed between an n-type region and a p-type region;
- and
- aluminum containing layers, an AlGaN layer disposed upon the n-type region and an AlN layer disposed upon the AlGaN layer;
- and
- a transparent material disposed on the AlN.
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A method comprising:
- growing a semiconductor structure on a substrate comprising silicon, the semiconductor structure comprising:
- an aluminum-containing layer in direct contact with the substrate;
- and
- a III-nitride light emitting layer disposed between an n-type region and a p-type region;
- removing the substrate;
- after removing the substrate, forming a transparent material in direct contact with the aluminum-containing layer;
- and
- texturing the transparent material.
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A device comprising:
- a semiconductor structure comprising:
- a III-nitride light emitting layer disposed between an n-type region and a p-type region;
- and
- an aluminum-containing layer;
- and
- a continuous porous III-nitride region disposed between the aluminum-containing layer and the III-nitride light emitting layer.
Dependencies are inferred from the claim text.