Semiconductor device

A semiconductor device comprising:

• a first transistor comprising a semiconductor substrate;
• a second transistor at least partly overlapping with the first transistor;
• and
• a capacitor at least partly overlapping with the second transistor,
• wherein the second transistor comprises:
• a semiconductor;
• a first conductive film and a second conductive film each comprising a first region in contact with a top surface of the semiconductor and a second region in contact with a side surface of the semiconductor;
• a first insulating film comprising a third region in contact with the semiconductor;
• and
• a third conductive film comprising a fourth region facing the semiconductor with the first insulating film therebetween,
• wherein the capacitor comprises:
• the first conductive film;
• a second insulating film comprising a fifth region in contact with the first conductive film;
• and
• a fourth conductive film comprising a sixth region facing the second region of the first conductive film with the second insulating film therebetween.

A semiconductor device comprising:

• a first transistor;
• a second transistor electrically connected to the second transistor;
• and
• a capacitor,
• wherein the second transistor comprises:
• a semiconductor;
• a first conductive film and a second conductive film each comprising a first region in contact with a top surface of the semiconductor and a second region in contact with a side surface of the semiconductor;
• a first insulating film comprising a third region in contact with the semiconductor;
• and
• a third conductive film comprising a fourth region facing the semiconductor with the first insulating film therebetween,
• wherein the capacitor comprises:
• the first conductive film;
• a second insulating film comprising a fifth region in contact with the first conductive film;
• and
• a fourth conductive film comprising a sixth region facing the second region of the first conductive film with the second insulating film therebetween.