Nanocrystal particles and processes for synthesizing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyunki KIM, Shin Ae JUN, Eun Joo JANG, Yongwook KIM, Tae Gon KIM, Yuho WON, Taekhoon KIM, Hyo Sook JANG
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Abstract
A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide
Claims24
A nanocrystal particle comprising at least one semiconductor material and at least one halogen element,
- wherein the nanocrystal particle has a core-shell structure including a core comprising a first semiconductor nanocrystal;
- and
- a shell surrounding the core and comprising a crystalline or amorphous material, and
- wherein the at least one halogen element is present as being doped therein or as a metal halide.
A process for synthesizing a nanocrystal particle, the process comprising:
- obtaining a first mixture including a first precursor, a ligand compound, and a solvent;
- optionally heating the first mixture;
- contacting a source of a halogen element, a second precursor, and optionally a first nanocrystal with the first mixture, which is optionally heated, to obtain a second mixture;
- and
- heating the second mixture to a reaction temperature to react the first precursor and the second precursor to obtain a nanocrystal particle comprising a semiconductor material and the halogen.
A nanoparticle comprising at least one semiconductor material and at least one halogen element,
- wherein the nanocrystal particle has a core-shell structure including a core comprising a first semiconductor nanocrystal, and a shell surrounding the core and comprising a crystalline or amorphous material,
- wherein the at least one halogen element is present as being doped therein or as a metal halide, and
- wherein the first semiconductor nanocrystal comprises a metal selected from a Group II metal, a Group III metal, a Group IV metal, and a combination thereof, and
- wherein the crystalline or amorphous material of the shell comprises a metal which is different from the metal included in the first semiconductor nanocrystal of the core and which is selected from a Group I metal, a Group II metal, a Group III metal, a Group IV metal, and a combination thereof.
Dependencies are inferred from the claim text.