US 2015/0083581 A1 · TECHNIQUES FOR PROCESSING SUBSTRATES USING DIRECTIONAL REACTIVE ION ETCHING

Abstract

A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.

Claims19

Dependent claims

A method of treating a substrate, comprising:

directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species, the substrate including a surface feature;
and
etching, using the ions in combination with the reactive ambient, at least one surface of the surface feature at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.

A method of forming a three dimensional (3-D) device, comprising:

providing a structure on a substrate surface extending perpendicularly to the substrate surface, the structure comprising a first material and a second material;
directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to the substrate surface, in a presence of a reactive ambient containing a reactive species;
and
etching, using the ions in combination with the reactive ambient, at least one portion of the structure at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

14/230,649Filed 31 Mar 2014

Priority

26 Sep 2013

Published

26 Mar 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10P 50/242
Of semiconductor materials: of Group IV materials
H01J 37/32357
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources: generation remote from the…
H01J 37/32422
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources: arrangement for selecting…
H10D 30/0241
Of fin field-effect transistors [FinFET]: doping of vertical sidewalls, e.g. using tilted or multi-angled implants

Techniques for processing substrates using directional reactive ion etching

Life of this patent

Techniques for processing substrates using directional reactive ion etching

Life of this patent

Abstract

Claims19