Methods and systems for designing and manufacturing optical lithography masks
AssigneeGlobalfoundries Inc.
InventorsPiyush VERMA, Todd P. LUKANC
Life of this patent
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AssigneeGlobalfoundries Inc.
InventorsPiyush VERMA, Todd P. LUKANC
Estimating the term…
A method of designing an optical photomask includes providing a target pattern, correcting the target pattern with an OPC model, adjusting the target pattern and/or the OPC model, and correcting a first corrected pattern. The target pattern indicates a target shape of a pre-pattern opening in a photoresist layer on a semiconductor substrate. Correcting the target pattern includes using an optical proximity correction (OPC) model to generate OPC output information that includes edge placement error (EPE) information, a first corrected pattern, and/or a simulated contour of the pre-pattern opening. Adjusting the target pattern and/or the OPC model includes adjusting with OPC based adjustments that are based on the OPC output information. Correcting the first corrected pattern includes using the OPC model in response to the OPC based adjustments to generate a second corrected pattern.
A method of designing an optical photomask, the method comprising:
A method of manufacturing an optical lithography mask, the method comprising:
A non-transitory computer readable medium storing control logic for operating a computer system, the control logic including control logic instructions for:
Dependencies are inferred from the claim text.