Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, comprising:

• forming a stacked film of oxide and nitride films on a substrate in a process chamber formed by a reaction tube installed inside a heater and a manifold configured to support the reaction tube and installed under the heater by alternately performing forming the oxide film and forming the nitride film, the act of forming the oxide film being performed by alternately supplying a first precursor gas to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate in the process chamber under a pressure less than atmospheric pressure once or more, the act of forming the nitride film being performed by alternately supplying a second precursor gas to the substrate in the process chamber and supplying a nitrogen-containing gas to the substrate in the process chamber once or more;
• and
• cleaning an inside of the process chamber after the act of forming the stacked film,
• the act of cleaning the inside of the process chamber, comprising:
• supplying a hydrogen-free fluorine-based gas from a first nozzle at least to an inner wall of the reaction tube, the first nozzle being installed in the manifold to extend upward from the manifold to an inside of the reaction tube;
• and
• supplying a hydrogen fluoride gas from a second nozzle at least to an inner wall of the manifold, the second nozzle being installed in the manifold.

A substrate processing apparatus, comprising:

• a process chamber formed by a reaction tube installed inside a heater and a manifold configured to support the reaction tube and installed under the heater;
• a gas supply system configured to supply gas into the process chamber;
• a first nozzle installed in the manifold to extend upward from the manifold to an inside of the reaction tube;
• a second nozzle installed in the manifold;
• a pressure adjusting part configured to adjust an internal pressure of the process chamber;
• and
• a control part configured to control the heater, the gas supply system and the pressure adjusting part so as to perform:
• forming a stacked film of oxide and nitride films on a substrate in the process chamber by alternately performing forming the oxide film and forming the nitride film, the act of forming the oxide film being performed by alternately supplying a first precursor gas to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate in the process chamber under a pressure less than atmospheric pressure once or more, the act of forming the nitride film being performed by alternately supplying a second precursor gas to the substrate in the process chamber and supplying a nitrogen-containing gas to the substrate in the process chamber once or more;
• and cleaning an inside of the process chamber after the act of forming the stacked film is performed, the act of cleaning the inside of the process chamber comprising supplying a hydrogen-free fluorine-based gas from the first nozzle at least to an inner wall of the reaction tube, and supplying a hydrogen fluoride gas from the second nozzle at least to an inner wall of the manifold.

A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a stacked film of oxide and nitride films on a substrate in a process chamber formed by a reaction tube installed inside a heater and a manifold configured to support the reaction tube and installed under the heater by alternately performing forming the oxide film and forming the nitride film, the act of forming the oxide film being performed by alternately supplying a first precursor gas to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate in the process chamber under a pressure less than atmospheric pressure once or more, the act of forming the nitride film being performed by alternately supplying a second precursor gas to the substrate in the process chamber and supplying a nitrogen-containing gas to the substrate in the process chamber once or more;

• and a process of cleaning an inside of the process chamber after forming the stacked film,
• the process of cleaning the inside of the process chamber, comprising:
• supplying a hydrogen-free fluorine-based gas from a first nozzle at least to an inner wall of the reaction tube, the first nozzle being installed in the manifold to extend upward from the manifold to an inside of the reaction tube;
• and
• supplying a hydrogen fluoride gas from a second nozzle at least to an inner wall of the manifold, the second nozzle being installed in the manifold.