Method of Fabricating a Semiconductor Device
AssigneeSamsung Electronics Co., Ltd.
InventorsEun Tae Kim, Jihoon Kim, Heesook Park, Jin Ho Oh, Jongmyeong Lee
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device may include conformally forming a gate insulating layer on a substrate having a recess, conformally forming a barrier layer containing fluorine-free tungsten nitride on the substrate with the gate insulating layer using an atomic layer deposition process, and forming a gate electrode on the barrier layer to fill at least a portion of the recess.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- conformally forming a gate insulating layer on a substrate having a recess;
- conformally forming a barrier layer containing fluorine-free tungsten nitride on the substrate with the gate insulating layer using an atomic layer deposition process;
- and
- forming a gate electrode on the barrier layer to fill at least a portion of the recess.
A method of fabricating a semiconductor device, the method comprising:
- conformally forming a gate insulating layer on a substrate having a recess;
- conformally forming a barrier layer containing fluorine-free tungsten nitride on the substrate with the gate insulating layer using an atomic layer deposition process, wherein the forming the barrier layer comprises:
- loading the substrate with the gate insulating layer into a process chamber;
- supplying a first precursor containing tungsten into the process chamber;
- then
- purging the process chamber a first time;
- then
- supplying a second precursor containing nitrogen into the process chamber;
- and then
- purging the process chamber a second time;
- and
- forming a gate electrode on the barrier layer to fill at least a portion of the recess.
A method of fabricating a semiconductor device, the method comprising:
- conformally forming a gate insulating layer on a substrate having a recess;
- conformally forming a barrier layer containing fluorine-free tungsten nitride on the substrate with the gate insulating layer using a plasma-enhanced atomic layer deposition process, wherein the plasma-enhanced atomic layer deposition process is performed under plasma with power ranging from about 250 W to about 350 W and at a temperature ranging from about 100° C. to about 200° C.;
- and
- forming a gate electrode on the barrier layer to fill at least a portion of the recess.
Dependencies are inferred from the claim text.