Group III Nitride Semiconductor Light-Emitting Device

A Group III nitride semiconductor light-emitting device having a plurality of Group III nitride semiconductor layers on a surface of a substrate of a material different from Group III nitride semiconductor, the light-emitting device comprising:

• an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer;
• wherein the pit density is 5.0×106/cm2 or less, and the pit diameter is 100 nm or less on a top surface opposite to the n-type cladding layer of the light-emitting layer;
• the n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer;
• and
• the first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer.