Photoelectric conversion device, method of manufacturing the same, and camera

A photoelectric conversion device comprising:

• a photoelectric conversion portion, provided in a semiconductor substrate, including a first semiconductor region of a first conductivity type;
• a second semiconductor region of the first conductivity type, provided adjacent to the first semiconductor region, having a lower concentration of an impurity of the first conductivity than the first semiconductor region;
• a third semiconductor region of the first conductivity type provided at a position away from the second semiconductor region;
• a first gate electrode provided on an insulation film on the semiconductor substrate between the second semiconductor region and the third semiconductor region;
• a fourth semiconductor region of the first conductivity type provided at a position away from the third semiconductor region;
• and
• a second gate electrode provided on an insulation film on the semiconductor substrate between the third semiconductor region and the fourth semiconductor region,
• wherein, in a planar view, the third semiconductor region is located at a position away from the second gate electrode, and the semiconductor substrate includes a region of the second conductivity type within a region extending from an edge of the third semiconductor region to below the second gate electrode.

A method of manufacturing a photoelectric conversion device, including

• a photoelectric conversion portion, provided in a semiconductor substrate, including a first semiconductor region of a first conductivity type,
• a second semiconductor region of the first conductivity type, provided adjacent to the first semiconductor region, having a lower concentration of an impurity of the first conductivity than the first semiconductor region,
• a third semiconductor region of the first conductivity type provided at a position away from the second semiconductor region, and
• a gate electrode provided on an insulation film on the semiconductor substrate and configured to form a channel between the second semiconductor region and the third semiconductor region,
• the method comprising:
• forming a side wall spacer on a side surface of the gate electrode;
• and
• forming the second semiconductor region at a position away from the gate electrode in a planar view by implanting an impurity using the gate electrode and the side wall spacer as masks,
• wherein the semiconductor substrate includes a region of a second conductivity type different in polarity from the first conductivity type within a region extending from an edge of the second semiconductor region to below the gate electrode.