Probe apparatus
AssigneeTokyo Electron Limited
InventorsEiichi Shinohara, Munetoshi Nagasaka, Isamu Inomata, Kazuya Yano, Yoshiyasu Kato
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AssigneeTokyo Electron Limited
InventorsEiichi Shinohara, Munetoshi Nagasaka, Isamu Inomata, Kazuya Yano, Yoshiyasu Kato
Estimating the term…
A probe apparatus of inspecting electrical characteristics of a power device having electrodes on both sides of a substrate at wafer level can reduce and uniformize a contact resistance between the electrode on a rear surface of the substrate and a mounting surface conductor of a chuck top. In the probe apparatus, an attracting device supports a semiconductor wafer W on the chuck top 12, and has many vertical fine holes in a pattern (diameter φ and pitch p) that satisfies the condition of φ<p≦2φ. For example, the diameter φ is about 0.25 mm, and the pitch p is about 0.5 mm.
A probe apparatus of inspecting an electrical characteristic of a power device that is formed on a substrate to be inspected and has electrodes on front and rear surfaces of the substrate, the probe apparatus comprising:
Dependencies are inferred from the claim text.